GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching
نویسندگان
چکیده
We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-in junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-in GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization. V C 2013 AIP Publishing LLC.
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